Coalescence Growth of Dislocation-Free GaN Crystals by the Na-Flux Method
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概要
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We have recently shown that dislocation-free GaN crystals could be grown on a GaN point seed by the Na-flux method. To enlarge the diameter of dislocation-free GaN crystals, we propose here the coalescence of GaN crystals grown from many isolated point seeds. In this study, we found that two GaN crystals grown from two point seeds arranged along the a-direction coalesced without generating dislocations at the coalescence boundary, and the c-axis misorientation between two crystals around the coalescence boundary gradually diminished as the growth proceeded. These results indicate that coalescence growth may become a key technique for fabricating large-diameter dislocation-free GaN crystals.
- 2012-09-25
著者
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Yoshimura Masashi
Department Of Applied Biological Chemistry The University Of Tokyo
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Mori Yusuke
Department Of Applied Chemistry School Of Science And Engineering Waseda University
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Matsuo Daisuke
Department Of Applied Chemistry Okayama University Of Science
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Murakami Kosuke
Department Of Applied Molecular Biosciences Graduate School Of Bioagricultural Sciences Nagoya Unive
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Todoroki Yuma
Department Of Electrical Electronic And Information Engineering Osaka University
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Imabayashi Hiroki
Department Of Electrical Electronic And Information Engineering Osaka University
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Imade Mamoru
Department Of Electrical Electronic And Information Engineering Osaka University
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Takazawa Hideo
Department Of Electrical Electronic And Information Engineering Osaka University
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Maruyama Mihoko
Department Of Electrical Electronic And Information Engineering Osaka University
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Imanishi Masayuki
Department of Electrical Electronic and Information Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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IMANISHI Masayuki
Department of Electrical Electronic and Information Engineering, Osaka University
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