Dynamic Study of Stacking Fault Tetrahedra Induced by Electron Irradiation in Copper Crystals
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概要
- 論文の詳細を見る
The behavior of stacking fault tetrahedra (SFT) induced by electron irradiation in copper crystals has been investigated with a high-voltage electron microscope, concentrating especially on a) the growth of individual SFT, and b) the formation of linear arrays of SFT in the <100> direction. The effects of accelerating voltage, specimen temperature and dose rate of electrons on the behavior of SFT have also been examined.
- 社団法人応用物理学会の論文
- 1982-04-20
著者
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SAKATA Takao
Research Center for Ultra-high Voltage Electron Microscopy, Osaka University
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FUJITA Hiroshi
Research Center for Ultra-High-Voltage Electron Microscopy, Osaka University
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Sakata Takao
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Fukuyo Hideaki
Research Center For Ultra-high Voltage Electron Microscopy Osaka University
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Fujita Hiroshi
Research Center For Uhvem Osaka University:(present Address)kinki University
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