Hanajiri T | Toyo Univ. Saitama Jpn
スポンサーリンク
概要
関連著者
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Sugano Takeshi
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Matsumoto Y
Materials And Structures Laboratory Tokyo Institute Of Technology
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SUGANO Takuo
Department of Electrical and Electronic Engineering, Toyo University
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MATSUMOTO Yoshinari
Department of Dermatology, Aichi Medical University
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Matsumoto Yoshinari
Depariment Of Dermatology
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Matsumoto Yoshinari
Department Of Electrical And Electronic Engineering Toyo University
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TOYABE Tohru
Department of Information and Computer Science, Toyo University
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Toyabe Tooru
Department Of Information And Computer Science Toyo University:bio-nano Electronics Research Center
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Matsumoto Y
Nara Inst. Sci. And Technol. Ikoma‐shi Jpn
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Sugano T
Nanoelectronic Materials Laboratory Frontier Research Program Riken
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Hanajiri T
Toyo Univ. Saitama Jpn
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SUGANO Takuo
Nanoelectronic Materials Laboratory, RIKEN
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HANAJIRI Taturo
Department of Electrical and Electronic Engineering, Toyo University
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HANAJIRI Tatsuro
Department of Electrical and Electronic Engineering, Toyo University
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Matsumoto Yuji
Materials And Structures Laboratory Tokyo Institute Of Technology
著作論文
- Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices ( Quantum Dot Structures)
- Single Electron Device with Asymmetric Tunnel Barriers