The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
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概要
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We consider the creation of dangling bonds by low-temperature illumination in a-Si:H. It is found that self-trapping of holes in weak bonds adjacent to Si:H bonds plays an important role in the photocreation of dangling bonds.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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MORIGAKI Kazuo
Institute of Solid State Physics,University of Tokyo
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