Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration Region
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概要
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Spin-dependent conductivity measurement has been on phosphorus-doped silicon in the liquid helium temperature range using the microwave with frequency of 9.6GHz. The resistivity decrease due to the donor spin resonance is interpreted in terms of the spin energy transfer model in which the microwave energy absorbed by the donor spin system is transferred to the mobile electron system contributing to the charge transport in the intermediate concentration region.
- 社団法人日本物理学会の論文
- 1974-04-15
著者
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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Onda Michie
Institute For Solid State Physics The University Of Tokyo
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Onda Michie
Institute For Solid State Physics University Of Tokyo
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