Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Overhauser Effect and Electron-Nuclear Double Resonance
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概要
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The peak shift of the central ESR line of P-doped Si has been measured as afunction of microwave power at 46.1 GHz and 1.5 K. Also a change in the peakshift associated with NM R of "Si and " P has been observed. This resttlt confirmsthat the power-dependent peak shift arises from the nuclear fields by "P and "Si enhanced by dynamical ntuclear polarization due to the Overhauser effectThis ENDOR experiment also provides information about the amplitude of donorwave function around a donor site and the spatial fluctuation of the electrondensity on the donor site.
- 社団法人日本物理学会の論文
- 1977-07-15
著者
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Toyoda Yukio
Institute For Solid State Physics University Of Tokyo:matsushita Research Insitute Tokyo Inc.
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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