Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si_<1-x>N_x:H

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概要

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• Light-induced phenomena in a-Si? ...N.:H films with x of the range of 0<,v30.28were studied by photoluminescence (PL) and optically detected magnetic resonance(ODMR) measurements. The experimental results on the spectral dependences of PLand ODMR for various excitation intensities measured before and after prolonged il-lumination in a-Si. ..N.:H films are interpreted in terms of a newly introducednonradiative center (E' center) as well as other radiative and nonradiative centers.The energy levels and nature of these centers are discussed. We obtained evidence forthe creation of both radiative and nonradiative centers by prolonged illumination,whose creation rate depends on the substrate temperature for preparation, particu-larly the hydrogen content, as well as the nutrogen content.[light-induced phenomena in] detected magnetic resonancea-Si. .N. :H, photolurninescence,optically

• 社団法人日本物理学会の論文
• 1991-05-15

著者

• MORIGAKI Kazuo

  Institute for Solid State Physics, University of Tokyo

• Yamaguchi Masaaki

  Institute for Solid State Physics, University of Tokyo

• Yamaguchi M

  Center For Computational Science And E-systems (ccse) Japan Atomic Energy Agency (jaea)

• Morigaki K

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid State Physics University Of Tokyo

• NITTA Shoji

  Department of Electronic and Computer Engineering,Gifu University

• Nitta S

  Gifu Univ. Gifu

• Nitta Shoji

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Gifu University

• Yamaguchi Masaaki

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid Stale Physics University Of Tokyo

• MORIGAKI Kazuo

  Institute of Solid State Physics,University of Tokyo

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