Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
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概要
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A resistivity decrease due to ESR has been observed in the metallic concentrationregion of P-doped Si at temperatures 1.5-4.2 K. This result is discussed in termsof the SP1f1-dCPCI1dCI1t transpoft, the ESR-lSS0C1QtCd cavuty TOSS effect llld theresistivity d'ecrease effect associat<Sd with the localized region. The results of theresistivity changes due to ESR and also due to microwave irradiation at ofresonance suggest that the localized region plays an important role for thesephenomena even in metallic samples of P-doped Si.
- 社団法人日本物理学会の論文
- 1977-01-15
著者
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Kishimoto Naoki
Institute For Solid State Physics University Of Tokyo
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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