Generation of Free Carriers via Exciton-Donor Interaction and Impact Ionization of Excitons in Cd(S,Se) Crystals
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概要
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An experiment has been performed to measure the relative change in the microwave conductivity with the irradiation of argon ion laser light (488.0 nm) at 4.2 K and 1.7 K in the mixed crystal of Cd(S,Se), whose intrinsic A exciton energy nearly coincided with the energy of the 488.0 nm laser light so that a number of excitons were created by the irradiation of this light. From our experiment, free carriers (electrons) were found to be generated as a result of exciton-neutral donor collision. Also, an experiment was carried out under the application of a static electric field up to 920 V/cm. In this case, the impact ionization of excitons occurred to result in the generation of free carriers. The probability of excitons due to the collision by accelerated electrons was calculated on the basis of the Born approximation and the electron temperature approximation and was compared with experimental results.
- 社団法人日本物理学会の論文
- 1972-01-05
著者
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Harada Toshiaki
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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