Triplet Exciton States in a-Si:H and Its Alloys as Elucidated by Optically Detected Magnetic Resonance Measurements
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概要
- 論文の詳細を見る
Triplet exciton states in a-Si:I-I, a-Si,C:H and a-Si,N:H were investigated by thesteady-state and time-resolved optically detected magnetic resonance techniques. Theexistence of triplet exciton states in a-Si:H and a-Si,N:H materials was confirmed, forthe first time from these measurements. The extent of the electron orbitals in thetriplet exciton state and its averaged lifetime in these materials were estimated to be- 10 A and - l ms, respectively. A singlet-triplet exciton splitting energy in a-Si:Hwas also estimated to be - 0.15 eV. An impurity-related center and a self-trapped ex-citon center are considered as the origin for the triplet exciton centers in thesematerials.
- 社団法人日本物理学会の論文
- 1989-09-15
著者
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Yoshida Mihoko
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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