Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1970-10-05
著者
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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TOYOTOMI Seizo
Institute for Solid State Physics, University of Tokyo
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Toyotomi Seizo
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
関連論文
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- Fatigue Effect and Temperature Dependence in Luminescence of Disordered Silicide Layer Compound:Siloxene (Si_6H_3(OH)_3)
- Metal-Nonmetal Transition in Doped Semiconductors (Selected Topics in Semiconductor Physics) -- (Phase Transition)
- Coherent Potential Approximation : Basic concepts and applications
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si_N_x:H
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance
- Photoacoustic Detection of Paramagnetic Resonance in Solids
- Time-Resolved Optically Detected Magnetic Resonance Experiment on Quenching Signals in a-Si:H
- Time-Resolved Optically Detected Magnetic Resonance Experiment on Conduction Band Tail Electrons and A Centres in Hydrogenated Amorphous Silicon
- Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power
- Conductivity Change Due to Electron Spin Resonance in Amorphous Si-Au System
- Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
- The Frozen-in Defects and Origin of Magnetic Centres in Phosphorus-Doped a-Si:H
- Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
- The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
- Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon
- Optical Absorption Spectra of Band-Edge Modulated a-Si_N_x:H Films
- Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H : Condensed Matter
- The Correlation between Photocreation of Dangling Bonds and Si-H Bond Clusters in a-Si:H
- Optically Detected ESR of the Excited States in Silver Halides
- Exchange Effects in the Optical Detection ESR and Dynamics of the Optical Pumping Cycle of F-Centers in KCl
- Photo-Induced Spin Resonance of Trapped Electrons in CdS_Se_x
- Effects of Electron Bombardment upon ESR-Linewidths of P-Donors in Ge
- Optical Absorption and Infrared Photoconductivity in Amorphous Si-Au System
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- Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Shift of Electron Spin Resonance Line at 0.56-4.2 K
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- Electron Spin Resonance Studies of Shallow Donors in CdS
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- Far-Infrared Impurity Absorption in Highly Doped n-Type Silicon
- Resistance changes Induced by Eletron Spin Resonance and Spin Relaxation in Phosphorus-Doped Silicon
- Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Overhauser Effect and Electron-Nuclear Double Resonance
- Note on Spin-Lattice Relaxation of Shallow Donors in Wurtzite-Type Semiconductors
- Triplet Exciton States in a-Si:H and Its Alloys as Elucidated by Optically Detected Magnetic Resonance Measurements
- Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
- Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
- Superconductivity of Ge_Au_x Alloy Films
- Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration Region
- Concentration Dependence of g-Value of Donor Electrons in As-Doped Germanium
- Resistivity Decrease Due to Donor Spin Resonance in n-Type Germanium
- ESR Line Width of As-Doped Germanium in the High Concentration Region
- Differences in Light-Induced Photoluminescence Fatigue in a-Si:H between 300 K and 7 K
- Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon : Optically Detected Magnetic Resonance
- Electron Spin Resonance Studies of Trapped Electrons in CdS
- Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H