Impurity Absorption Due to Transitions to Conduction Band Edge Region in p-Doped Si

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概要

• 論文の詳細を見る
• 社団法人日本物理学会の論文
• 1972-05-05

著者

• Sugawara Fuyuhiko

  Institute For Solid State Physics The University Of Tokyo

• Sugawara Fuyuhiko

  Institute For Solid State Physics University Of Tokyo

• TOYOTOMI Seizo

  Institute for Solid State Physics, University of Tokyo

• Toyotomi Seizo

  Institute For Solid State Physics University Of Tokyo

関連論文

• Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
• Photo-Induced Spin Resonance of Trapped Electrons in CdS_Se_x
• Temperature Dependence of Far-Infrared Reflectivity Spectra of NaNO_2 Crystals
• Electron Spin Resonance Studies of Shallow Donors in CdS
• Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped Si
• Donor States in Highly Compensated Silicon, as Elucidated by Electron Spin Resonance Experiment
• Photosensitive Spin Resonance of Oxygen Impurities in GaP
• Impurity Absorption Due to Transitions to Conduction Band Edge Region in p-Doped Si
• Far-Infrared Impurity Absorption in Highly Doped n-Type Silicon
• Resistance changes Induced by Eletron Spin Resonance and Spin Relaxation in Phosphorus-Doped Silicon

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