Resistance changes Induced by Eletron Spin Resonance and Spin Relaxation in Phosphorus-Doped Silicon

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概要

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• Phosphorus-doped sillcon in the intermediate concentration range of impurity conduction exhibits a decrease in dc resistance with occurrence of ESR at low temperatures. This phenomenon is causedy by the conversion of spin energy absorbed at ESR into the kinetic energy of carriers. The carriers are are here mobile electrons which are excited thermally to the delocalized states characterized by the activation energy ε_2. The experimental characteristics of this phenomenon are elucidated by studying the non-ohmic properties at high electric fields. The rate at which the absorbed spin energy is transferred to the lattice via the electron kinetic energy is determined. The spin relazation process of this type is shown to become predominant with increasing donor concentration in the semiconductor-metal transition range.

• 社団法人日本物理学会の論文
• 1974-07-15

著者

• Toyotomi Seizo

  Institute For Solid State Physics University Of Tokyo

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• Impurity Absorption Due to Transitions to Conduction Band Edge Region in p-Doped Si
• Far-Infrared Impurity Absorption in Highly Doped n-Type Silicon
• Resistance changes Induced by Eletron Spin Resonance and Spin Relaxation in Phosphorus-Doped Silicon

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