Far-Infrared Impurity Absorption in Highly Doped n-Type Silicon
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概要
- 論文の詳細を見る
- 社団法人日本物理学会の論文
- 1975-01-15
著者
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Toyotomi Seizo
Institute For Solid State Physics University Of Tokyo
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Toyotomi Seizo
Instiute For Solid State Physics University Of Tokyo
関連論文
- Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
- Photo-Induced Spin Resonance of Trapped Electrons in CdS_Se_x
- Electron Spin Resonance Studies of Shallow Donors in CdS
- Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped Si
- Donor States in Highly Compensated Silicon, as Elucidated by Electron Spin Resonance Experiment
- Photosensitive Spin Resonance of Oxygen Impurities in GaP
- Impurity Absorption Due to Transitions to Conduction Band Edge Region in p-Doped Si
- Far-Infrared Impurity Absorption in Highly Doped n-Type Silicon
- Resistance changes Induced by Eletron Spin Resonance and Spin Relaxation in Phosphorus-Doped Silicon