Morigaki Kazuo | Institute For Solid State Physics University Of Tokyo
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概要
関連著者
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Toyotomi Seizo
Institute For Solid State Physics University Of Tokyo
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Hirabayashi Izumi
Institute For Solid State Physics University Of Tokyo
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HIRABAYASHI Izumi
Institute for Solid State Physics, University of Tokyo
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Kishimoto Naoki
Institute For Solid State Physics University Of Tokyo
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Yamaguchi Masaaki
Institute for Solid State Physics, University of Tokyo
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Yamaguchi Masaaki
Institute For Solid State Physics University Of Tokyo
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MORIGAKI Kazuo
Institute of Solid State Physics,University of Tokyo
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SANO Yoshio
Institute for Solid State Physics, University of Tokyo
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Sano Yoshio
Institute For Solid State Physics University Of Tokyo
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Morigaki K
Institute For Solid State Physics University Of Tokyo
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Ogihara Chisato
Institute For Solid State Physics University Of Tokyo
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Hirabayashi Izumi
Institute for Solid State Physics,University of Tokyo
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Matsumura Hideki
Department Of Applied Electronics Tokyo Institute Of Technology
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Kanzaki Hiroshi
Institute For Solid State Physics University Of Tokyo
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Yamaguchi M
Center For Computational Science And E-systems (ccse) Japan Atomic Energy Agency (jaea)
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YOSHIDA Mihoko
Institute for Solid State Physics, University of Tokyo
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NITTA Shoji
Department of Electronic and Computer Engineering,Gifu University
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HOSHINA Teruhiko
Sony Corporation Research Center
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Nitta S
Gifu Univ. Gifu
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Nitta Shoji
Fadulty Of Engineering Gifu University
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Nitta Shoji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Gifu University
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OGIHARA Chisato
Institute for Solid State Physics,University of Tokyo
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Yoshida Mihoko
Institute For Solid State Physics University Of Tokyo
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MURAYAMA Kazuro
Institute for Solid State Physics, University of Tokyo
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Toyoda Yukio
Institute For Solid State Physics University Of Tokyo:matsushita Research Insitute Tokyo Inc.
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Kanzaki Hiroshi
Institute For Solid State Physics The University Of Tokyo
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Murayama Kazuro
Institute For Solid State Physics University Of Tokyo:(present Address) Department Of Physics Facult
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Kanzaki Hiroshi
Institute For Solid Slate Physics University Of Tokyo
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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YAMANAKA SHOJI
Department of Pathology, Yokohama City University
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KISHIMOTO Naoki
National Institute of Agrobiological Resources
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Yamanaka Shoji
Department Of Applied Chemistry Faculty Of Engineering Hiroshima University
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YONEZAWA Fumiko
Department of Phsics, Keio University
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Kishimoto Naoki
Institute For Solid State Physics University Of Tokyo:national Research Institute For Metals
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TAKENAKA Hisashi
Institute for Solid State Physics,The University of Tokyo
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Takenaka Hisashi
Institute For Solid State Physics University Of Tokyo:department Of Electronic Engineering Iwaki-mei
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Murakami Kouichi
Faculty Of Engineering Science Osaka University
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Yamanaka Shoji
Department Of Applied Chemistry Faculty Of Engineering Hiroshima Univirsity
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Matsumura Hideki
Department Of Electrical Engineering Hiroshima University
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NAKAMURA Arao
Institute for Materials Research, Tnhokit University
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OHTA Hiroshi
Institute of Space and Astronautical Science
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Shoji Yasuko
Institute For Optical Research Kyoiku University:(present)institute For Solid State Physics Universi
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Shoji Yasuko
Institute Of Solid State Physics University Of Tokyo
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Morigaki K
Hiroshima Inst. Technol. Hiroshima Jpn
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HARABATASHI Izumi
Institute for Solid State Physics,University of Tokyo
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Yonezawa Fumiko
Department Of Physics The City College Of Cuny
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SAKURAGI Shiro
Institute for Solid State Physics, University of Tokyo
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Sakuragi Shiro
Institute For Solid State Physics University Of Tokyo
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Harada Toshiaki
Institute For Solid State Physics University Of Tokyo
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TOYOTOMI Seizo
Institute for Solid State Physics, University of Tokyo
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NITTA Shoji
Faculty of Engineering, Gifu University
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Harabatashi Izumi
Institute For Solid State Physics University Of Tokyo
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Hiraki Akio
Denki-bussei Laboratory Department Of Electrical Engineering Osaka University
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Toyotomi Seizo
Institute Of Solid State Physics University Of Tokyo
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Ogihara C
Yamaguchi Univ. Ube Jpn
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MURAKAMI Koichi
Faculty of Engineering Science,Osaka University
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Hoshina Teruhiko
Sony Corporation Research Laboratory
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Nakamura Arao
Institute For Solid State Physics University Of Tokyo
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Yonezawa Fumiko
Department Of Applied Physics Tokyo Institute Of Technology
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Murakami Kouichi
Faculty Of Engineering Ehime University
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Murakami Kouichi
Faculty Of Engineering Science Osaka University:institute Of Materials Science University Of Tsukuba
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TOYOTOMI Yasuko
Institute of Applied Physics,University of Tsukuba
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Toyotomi Yasuko
Institute For Optical Research Kyoiku University
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Toyotomi Yasuko
Institute For Solid State Physics University Of Tokyo:(present Address) Institute For Optical Resear
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Shimizu Tatsuo
Department Of Applied Physics University Of Tokyo
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Murakami Koichi
Faculty Of Engineering Science Osaka University
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Ohta Hiroshi
Institute For Solid State Physics University Of Tokyo
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YONEZAWA Fumiko
Department of Physics, The City College of CUNY
著作論文
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
- Photoluminescence of a-Si:H Films Prepared by Catalytic Chemical Vapor Deposition Method
- Fatigue Effect and Temperature Dependence in Luminescence of Disordered Silicide Layer Compound:Siloxene (Si_6H_3(OH)_3)
- Metal-Nonmetal Transition in Doped Semiconductors (Selected Topics in Semiconductor Physics) -- (Phase Transition)
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si_N_x:H
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance
- Photoacoustic Detection of Paramagnetic Resonance in Solids
- Time-Resolved Optically Detected Magnetic Resonance Experiment on Quenching Signals in a-Si:H
- Time-Resolved Optically Detected Magnetic Resonance Experiment on Conduction Band Tail Electrons and A Centres in Hydrogenated Amorphous Silicon
- Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power
- Conductivity Change Due to Electron Spin Resonance in Amorphous Si-Au System
- Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
- The Frozen-in Defects and Origin of Magnetic Centres in Phosphorus-Doped a-Si:H
- Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
- The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
- Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon
- Optical Absorption Spectra of Band-Edge Modulated a-Si_N_x:H Films
- Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H : Condensed Matter
- The Correlation between Photocreation of Dangling Bonds and Si-H Bond Clusters in a-Si:H
- Optically Detected ESR of the Excited States in Silver Halides
- Exchange Effects in the Optical Detection ESR and Dynamics of the Optical Pumping Cycle of F-Centers in KCl
- Photo-Induced Spin Resonance of Trapped Electrons in CdS_Se_x
- Effects of Electron Bombardment upon ESR-Linewidths of P-Donors in Ge
- Optical Absorption and Infrared Photoconductivity in Amorphous Si-Au System
- Generation of Free Carriers via Exciton-Donor Interaction and Impact Ionization of Excitons in Cd(S,Se) Crystals
- Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Shift of Electron Spin Resonance Line at 0.56-4.2 K
- Photoconductivity Associated with Auger Recombination of Excitons Bound to Neutral Donors in Te-Doped Gallium Phosphide
- Electron Spin Resonance of Fe^-Associated Centers in Cadmium Selenide
- Electron Spin Resonance of Photosensitive Centers in Ag-Doped CdS
- Electron-Hole Recombination in a-Si:H/a-Si_N_x:H Superlattices as Elucidated by Time-Resolved Luminescence and Optically Detected Magnetic Resonance Measurements
- Electron Spin Resonance Studies of Shallow Donors in CdS
- Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped Si
- Donor States in Highly Compensated Silicon, as Elucidated by Electron Spin Resonance Experiment
- Photosensitive Spin Resonance of Oxygen Impurities in GaP
- Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Overhauser Effect and Electron-Nuclear Double Resonance
- Note on Spin-Lattice Relaxation of Shallow Donors in Wurtzite-Type Semiconductors