Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power
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概要
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Metal-nonmetal transition in amorphous Si-Au system has been investigatedby means of electrical condtnctivity and thermoelectric power. It is found thatthe Au atoms act as acceptors and form a narrow band in pseudo-gap of amor-phous Si. The metal-nonmetal transition occurs at x=14'% and is assigned tothe Anderson transition. In the nonmetallic region, the transport is dominatedby the variable range hopping conduction in the lower temperature range andby the ambipolar conduction in the host band in the higher temperature range.
- 社団法人日本物理学会の論文
- 1979-03-15
著者
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Kishimoto Naoki
Institute For Solid State Physics University Of Tokyo
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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