New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon

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概要

• 論文の詳細を見る

• New evidence for creation of dangling bonds by high optical excitation at low temperatures is presented through the time-resolved luminescence measurements and ESR measurements in glow discharge amorphous silicon.

• 社団法人応用物理学会の論文
• 1980-07-05

著者

• MORIGAKI Kazuo

  Institute for Solid State Physics, University of Tokyo

• HIRABAYASHI Izumi

  Institute for Solid State Physics, University of Tokyo

• Morigaki Kazuo

  Institute For Solid State Physics University Of Tokyo

• Nitta Shoji

  Fadulty Of Engineering Gifu University

• NITTA Shoji

  Faculty of Engineering, Gifu University

• Hirabayashi Izumi

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid Stale Physics University Of Tokyo

関連論文

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• Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance
• Photoacoustic Detection of Paramagnetic Resonance in Solids
• Time-Resolved Optically Detected Magnetic Resonance Experiment on Quenching Signals in a-Si:H
• Time-Resolved Optically Detected Magnetic Resonance Experiment on Conduction Band Tail Electrons and A Centres in Hydrogenated Amorphous Silicon
• Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power
• Conductivity Change Due to Electron Spin Resonance in Amorphous Si-Au System
• Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
• The Frozen-in Defects and Origin of Magnetic Centres in Phosphorus-Doped a-Si:H
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• The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
• Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon
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• Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
• Superconductivity of Ge_Au_x Alloy Films
• Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration Region
• Concentration Dependence of g-Value of Donor Electrons in As-Doped Germanium
• Resistivity Decrease Due to Donor Spin Resonance in n-Type Germanium
• ESR Line Width of As-Doped Germanium in the High Concentration Region
• Differences in Light-Induced Photoluminescence Fatigue in a-Si:H between 300 K and 7 K
• Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon : Optically Detected Magnetic Resonance
• Electron Spin Resonance Studies of Trapped Electrons in CdS
• Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

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