Differences in Light-Induced Photoluminescence Fatigue in a-Si:H between 300 K and 7 K
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概要
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The photoluminescence (PI,) spectral change in a-Si:H inc[uced by prolonged ex-posure to strong light was studied at 7 K and 300 K. The light-induced change in PL istwofold, a fatigue of the PL main peak and an enhancement irt the low energy region.Careful analysis of the intensity changes for exposure temperature dependence and excitation intensity dependence suggests that at least two proccsses are involved. ThePL-spectral change associated with light soaking is interpreted as the photocreationof radiative and nonradiative defects.
- 社団法人日本物理学会の論文
- 1990-05-15
著者
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Yoshida Mihoko
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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