Electron-Hole Recombination in a-Si:H/a-Si_<1-x>N_x:H Superlattices as Elucidated by Time-Resolved Luminescence and Optically Detected Magnetic Resonance Measurements
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概要
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Time-resolved luminescence and time-resolved ODMR measurements have beencarried out on a-Si:H / a-Si. .N.:H superlattices and electron-hole recombination pro-cesses in these superlattices have been studied. Nonradiative recombination is sup-pressed in the superlattices by its two-dimensional featur'e when the well-layerthickness, L., is much smaller than the average spatial separation of dangling bonds.Radiative recombination is enhanced by an increase in density of electrons and holesdue to the confinement effect. But the radiative recombination rate is reduced by itstwo-dimensional feature when the well-layer thickness is very small (L.< 10 A). Thetime-resolved luminescence spectra shift towards higher energy and are broadenedwith decreasing L.. These results are explained in terms of a quantum-well model.
- 社団法人日本物理学会の論文
- 1988-12-15
著者
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Ogihara Chisato
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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