Metal-Nonmetal Transition in Doped Semiconductors (Selected Topics in Semiconductor Physics<特集>) -- (Phase Transition)
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概要
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The metal-nonmetal (M-NM) transition observed in some doped semiconductors is discussed on the basis of the Mott-Hubbard-Anderson scheme. A classification of characteristic donor (acceptor) concentration regions is given. The M-NM transition concentration is defined as a concentration at which the states corresponding to the Fermi level become delocalized. Several experimental data near the transition concentration are analyzed and interpreted as lending support to the above-mentioned scheme. A possible picture concerning the position of the Fermi level relative to the mobility gap is proposed and some experimental results are described, which are explained in consistent with this picture.
- 理論物理学刊行会の論文
- 1975-11-29
著者
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YONEZAWA Fumiko
Department of Phsics, Keio University
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Yonezawa Fumiko
Department Of Physics The City College Of Cuny
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Yonezawa Fumiko
Department Of Applied Physics Tokyo Institute Of Technology
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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YONEZAWA Fumiko
Department of Physics, The City College of CUNY
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