Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H : Condensed Matter
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概要
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A microscopic mechanism for annealing of photocreated dangling bonds in a-Si:H is presented taking into account hydrogen plays an important role in annealing of dangling bonds. This model can account for the experimental fact that photocreated dangling bonds as well as thermally created dangling bonds are annealed at relatively low temperatures such as 100-150℃ in a-Si:H
- 社団法人応用物理学会の論文
- 1988-02-20
著者
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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