Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon

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概要

• 論文の詳細を見る

• Time-resolved luminescence experiments have been carried out at low tem-r>eratures in hvdroxenated amorr>hous silicon usin: a r:>ulsed dve laser. 'The expert-mental results are discussed on the basis of model calculations which take intoaccount radiative recombination of trapped electron-hole pairs and also nonradia..tive recombination at dangling bond centres. Fatigue effect in the luminescencehas also been investigated by time-resolved measurements.

• 社団法人日本物理学会の論文
• 1981-09-15

著者

• MORIGAKI Kazuo

  Institute for Solid State Physics, University of Tokyo

• HIRABAYASHI Izumi

  Institute for Solid State Physics, University of Tokyo

• Morigaki Kazuo

  Institute For Solid State Physics University Of Tokyo

• Nitta Shoji

  Fadulty Of Engineering Gifu University

• Hirabayashi Izumi

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid Stale Physics University Of Tokyo

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