Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon
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概要
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Time-resolved luminescence experiments have been carried out at low tem-r>eratures in hvdroxenated amorr>hous silicon usin: a r:>ulsed dve laser. 'The expert-mental results are discussed on the basis of model calculations which take intoaccount radiative recombination of trapped electron-hole pairs and also nonradia..tive recombination at dangling bond centres. Fatigue effect in the luminescencehas also been investigated by time-resolved measurements.
- 社団法人日本物理学会の論文
- 1981-09-15
著者
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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HIRABAYASHI Izumi
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Nitta Shoji
Fadulty Of Engineering Gifu University
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Hirabayashi Izumi
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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