Optical Absorption and Infrared Photoconductivity in Amorphous Si-Au System
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概要
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Optical absorption spectra and infrared photoconductivity have been measuredfor amorphous Si.gg-.-Au. films. From the optical absorption in the energyrange from 0.5 eV to 3.0 eV, it is found that the square root of the product of theabsorption coefficient and the photon energy is proportional to the photonenergy in the region of x< 30 '3 and that the optical gap decreases with increasingAu concentration. The result of photoconductivity with photon energy less thanthe optical gap suggests that the energy level of the localized states due to Auatoms lies at about 0.3 eV above the mobility edge of the valence band. Theseresults are 'discussed in relation to the metal-nonmetal transition observed inthis system.
- 社団法人日本物理学会の論文
- 1979-02-15
著者
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Kishimoto Naoki
Institute For Solid State Physics University Of Tokyo
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Kishimoto Naoki
Institute For Solid State Physics University Of Tokyo:national Research Institute For Metals
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
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