Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H
スポンサーリンク
概要
- 論文の詳細を見る
We present a microscopic model for the photocreation of silicon dangling bonds, taking into account the combined effects of breaking of weak bonds, Si-H bond switching, and H-tunneling which occur under intense optical excitation. We also discuss the kinetics of the photocreation of silicon dangling bonds, taking into account that the other defects than dangling bonds are photocreated.
- 社団法人応用物理学会の論文
- 1988-02-20
著者
-
MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
-
Morigaki Kazuo
Institute For Solid Stale Physics University Of Tokyo
関連論文
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
- Photoluminescence of a-Si:H Films Prepared by Catalytic Chemical Vapor Deposition Method
- Fatigue Effect and Temperature Dependence in Luminescence of Disordered Silicide Layer Compound:Siloxene (Si_6H_3(OH)_3)
- Metal-Nonmetal Transition in Doped Semiconductors (Selected Topics in Semiconductor Physics) -- (Phase Transition)
- Coherent Potential Approximation : Basic concepts and applications
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si_N_x:H
- Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H
- Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance
- Photoacoustic Detection of Paramagnetic Resonance in Solids
- Time-Resolved Optically Detected Magnetic Resonance Experiment on Quenching Signals in a-Si:H
- Time-Resolved Optically Detected Magnetic Resonance Experiment on Conduction Band Tail Electrons and A Centres in Hydrogenated Amorphous Silicon
- Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power
- Conductivity Change Due to Electron Spin Resonance in Amorphous Si-Au System
- Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
- The Frozen-in Defects and Origin of Magnetic Centres in Phosphorus-Doped a-Si:H
- Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
- The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
- Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon
- New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon
- Optical Absorption Spectra of Band-Edge Modulated a-Si_N_x:H Films
- Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H : Condensed Matter
- The Correlation between Photocreation of Dangling Bonds and Si-H Bond Clusters in a-Si:H
- Optically Detected ESR of the Excited States in Silver Halides
- Exchange Effects in the Optical Detection ESR and Dynamics of the Optical Pumping Cycle of F-Centers in KCl
- Photo-Induced Spin Resonance of Trapped Electrons in CdS_Se_x
- Effects of Electron Bombardment upon ESR-Linewidths of P-Donors in Ge
- Optical Absorption and Infrared Photoconductivity in Amorphous Si-Au System
- Generation of Free Carriers via Exciton-Donor Interaction and Impact Ionization of Excitons in Cd(S,Se) Crystals
- Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Shift of Electron Spin Resonance Line at 0.56-4.2 K
- Electron Spin Resonance of Fe^-Associated Centers in Cadmium Selenide
- Electron Spin Resonance of Photosensitive Centers in Ag-Doped CdS
- Electron-Hole Recombination in a-Si:H/a-Si_N_x:H Superlattices as Elucidated by Time-Resolved Luminescence and Optically Detected Magnetic Resonance Measurements
- Electron Spin Resonance Studies of Shallow Donors in CdS
- Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped Si
- Donor States in Highly Compensated Silicon, as Elucidated by Electron Spin Resonance Experiment
- Photosensitive Spin Resonance of Oxygen Impurities in GaP
- Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Overhauser Effect and Electron-Nuclear Double Resonance
- Note on Spin-Lattice Relaxation of Shallow Donors in Wurtzite-Type Semiconductors
- Triplet Exciton States in a-Si:H and Its Alloys as Elucidated by Optically Detected Magnetic Resonance Measurements
- Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
- Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
- Superconductivity of Ge_Au_x Alloy Films
- Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration Region
- Concentration Dependence of g-Value of Donor Electrons in As-Doped Germanium
- Resistivity Decrease Due to Donor Spin Resonance in n-Type Germanium
- ESR Line Width of As-Doped Germanium in the High Concentration Region
- Differences in Light-Induced Photoluminescence Fatigue in a-Si:H between 300 K and 7 K
- Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon : Optically Detected Magnetic Resonance
- Electron Spin Resonance Studies of Trapped Electrons in CdS
- Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H