Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

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概要

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• We present a microscopic model for the photocreation of silicon dangling bonds, taking into account the combined effects of breaking of weak bonds, Si-H bond switching, and H-tunneling which occur under intense optical excitation. We also discuss the kinetics of the photocreation of silicon dangling bonds, taking into account that the other defects than dangling bonds are photocreated.

• 社団法人応用物理学会の論文
• 1988-02-20

著者

• MORIGAKI Kazuo

  Institute for Solid State Physics, University of Tokyo

• Morigaki Kazuo

  Institute For Solid Stale Physics University Of Tokyo

関連論文

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• Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

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