Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H

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概要

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• Light-induced phenomena in v-Si:H were studied by photoluminescence (PL) andoptically detected magnetic resonance (ODMR) measurements. The experimentalresults on the spectral dependence of PI and ODMR against the excitation intensitymeasured before and after prolonged illumination provide evidence for creation ofboth radiative (E centers) and nonradiative (Si-dangling bonds) defects, whose energylevel in the gap and nature are discussed.Ilight-induced phenomena in a-Si:H, photoluminescence, optically detected lJ magnetic resonancel

• 社団法人日本物理学会の論文
• 1989-10-15

著者

• MORIGAKI Kazuo

  Institute for Solid State Physics, University of Tokyo

• Yamaguchi Masaaki

  Institute for Solid State Physics, University of Tokyo

• Yamaguchi M

  Center For Computational Science And E-systems (ccse) Japan Atomic Energy Agency (jaea)

• Morigaki K

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid State Physics University Of Tokyo

• NITTA Shoji

  Department of Electronic and Computer Engineering,Gifu University

• Nitta S

  Gifu Univ. Gifu

• Nitta Shoji

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Gifu University

• Yamaguchi Masaaki

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid Stale Physics University Of Tokyo

• MORIGAKI Kazuo

  Institute of Solid State Physics,University of Tokyo

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