The Frozen-in Defects and Origin of Magnetic Centres in Phosphorus-Doped a-Si:H
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概要
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A model for the frozen-in defects responsible for the thermal equilibrium phenomenon in phosphorus-doped a-Si:H is presented. The origin of an ESR line of g=2.004 and hyperfine lines is also discussed in relation to this phenomenon.
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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MORIGAKI Kazuo
Institute for Solid State Physics, University of Tokyo
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Morigaki Kazuo
Institute For Solid State Physics University Of Tokyo
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