Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance

スポンサーリンク

概要

• 論文の詳細を見る

• Optically detected magnetic resonance experiments provide evidence forcreation of defects (dangling bond centres) by prolonged laser light irradiationin hydrogenated amorphous silicon.

• 社団法人日本物理学会の論文
• 1982-01-15

著者

• SANO Yoshio

  Institute for Solid State Physics, University of Tokyo

• MORIGAKI Kazuo

  Institute for Solid State Physics, University of Tokyo

• HIRABAYASHI Izumi

  Institute for Solid State Physics, University of Tokyo

• Sano Yoshio

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid State Physics University Of Tokyo

• Hirabayashi Izumi

  Institute For Solid State Physics University Of Tokyo

• Morigaki Kazuo

  Institute For Solid Stale Physics University Of Tokyo

• Hirabayashi Izumi

  Institute for Solid State Physics,University of Tokyo

関連論文

• Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
• Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si:F, a-Si:F, H and a-Si:F, D)
• Photoluminescence of a-Si:H Films Prepared by Catalytic Chemical Vapor Deposition Method
• Fatigue Effect and Temperature Dependence in Luminescence of Disordered Silicide Layer Compound:Siloxene (Si_6H_3(OH)_3)
• Metal-Nonmetal Transition in Doped Semiconductors (Selected Topics in Semiconductor Physics) -- (Phase Transition)
• Coherent Potential Approximation : Basic concepts and applications
• Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si_N_x:H
• Observation of Light-Induced Phenomena by Photoluminescence and Optically Detected Magnetic Resonance in a-Si:H
• Defect Creation by Optical Excitation in Hydrogenated Amorphous Silicon as Elucidated by Optically Detected Magnetic Resonance
• Photoacoustic Detection of Paramagnetic Resonance in Solids
• Time-Resolved Optically Detected Magnetic Resonance Experiment on Quenching Signals in a-Si:H
• Time-Resolved Optically Detected Magnetic Resonance Experiment on Conduction Band Tail Electrons and A Centres in Hydrogenated Amorphous Silicon
• Metal-Nonmetal Transition in Amorphous Si-Au System at Low Temperatures: Measurements of Electrical Conductivity and Thermoelectric Power
• Conductivity Change Due to Electron Spin Resonance in Amorphous Si-Au System
• Resistivity Decrease Due to Electron Spin Resonance in the Metallic Region of Heavily Phosphorus-Doped Silicon
• The Frozen-in Defects and Origin of Magnetic Centres in Phosphorus-Doped a-Si:H
• Low Noise Detection of Millimeterwave Utilizing the Hot Electron Effect in P-Doped Si
• The Role of Self-Trapped Holes in the Photoercation of Dangling Bonds in a-Si:H
• Time-Resolved Luminescence and Its Fatigue Effect in Hydrogenated Amorphous Silicon
• New Evidence for Defect Creation by High Optical Excitation in Glow Discharge Amorphous Silicon
• Optical Absorption Spectra of Band-Edge Modulated a-Si_N_x:H Films
• Microscopic Mechanism for Annealing of Photocreated Dangling Bonds in a-Si:H : Condensed Matter
• The Correlation between Photocreation of Dangling Bonds and Si-H Bond Clusters in a-Si:H
• Optically Detected ESR of the Excited States in Silver Halides
• Exchange Effects in the Optical Detection ESR and Dynamics of the Optical Pumping Cycle of F-Centers in KCl
• Photo-Induced Spin Resonance of Trapped Electrons in CdS_Se_x
• Effects of Electron Bombardment upon ESR-Linewidths of P-Donors in Ge
• Optical Absorption and Infrared Photoconductivity in Amorphous Si-Au System
• Generation of Free Carriers via Exciton-Donor Interaction and Impact Ionization of Excitons in Cd(S,Se) Crystals
• Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Shift of Electron Spin Resonance Line at 0.56-4.2 K
• Photoconductivity Associated with Auger Recombination of Excitons Bound to Neutral Donors in Te-Doped Gallium Phosphide
• Electron Spin Resonance of Fe^-Associated Centers in Cadmium Selenide
• Electron Spin Resonance of Photosensitive Centers in Ag-Doped CdS
• Electron-Hole Recombination in a-Si:H/a-Si_N_x:H Superlattices as Elucidated by Time-Resolved Luminescence and Optically Detected Magnetic Resonance Measurements
• Electron Spin Resonance Studies of Shallow Donors in CdS
• Spin Energy Transfer from Donor Spin System to Mobile Electron System in P-Doped Si
• Donor States in Highly Compensated Silicon, as Elucidated by Electron Spin Resonance Experiment
• Photosensitive Spin Resonance of Oxygen Impurities in GaP
• Electron Spin Resonance Study of Interacting Donor Clusters in Phosphours-Doped Silicon at Low Temperatures. : I. Overhauser Effect and Electron-Nuclear Double Resonance
• Note on Spin-Lattice Relaxation of Shallow Donors in Wurtzite-Type Semiconductors
• Triplet Exciton States in a-Si:H and Its Alloys as Elucidated by Optically Detected Magnetic Resonance Measurements
• Shift of Electron Spin Resonance Line in Phosphorus-Doped Silicon
• Electron Spin Resonance Studies of Interacting Donor Clusters in Phosphorus-Doped Silicon
• Superconductivity of Ge_Au_x Alloy Films
• Spin-Dependent Conductivity of Phosphorus-Doped Silicon in the Intermediate Concentration Region
• Concentration Dependence of g-Value of Donor Electrons in As-Doped Germanium
• Resistivity Decrease Due to Donor Spin Resonance in n-Type Germanium
• ESR Line Width of As-Doped Germanium in the High Concentration Region
• Differences in Light-Induced Photoluminescence Fatigue in a-Si:H between 300 K and 7 K
• Spin-Dependent Radiative and Nonradiative Recombinations in Hydrogenated Amorphous Silicon : Optically Detected Magnetic Resonance
• Electron Spin Resonance Studies of Trapped Electrons in CdS
• Microscopic Mechanism for the Photo-Creation of Dangling Bonds in a-Si:H

もっと見る 閉じる

スポンサーリンク