Electron Spin Resonance Centers and Light-Induced Effects in Porous Silicon

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概要

• 論文の詳細を見る

• The nature of defects in porous silicon has been investigated by electron spin resonance measurements. The main defect has trigonal symmetry with a principal axis along the <111> axis, and the principal values of the g-tensors, g_&⫽ and g_&⊥, are 2.0022 and 2.0078, respectively. This defect is identified as a silicon dangling bond located at the surface or at the interface between c-Si and SiO_2. Light-induced defect creation and accompanying photoluminescence fatigue have been observed. These changes are partly, but not completely, recovered by thermal annealing, unlike hydrogenated amorphous silicon. Consequently, it is suggested that the light-emitting region of porous silicon is mainly the single-crystal phase.

• 社団法人応用物理学会の論文
• 1993-03-15

著者

• Yokomichi Haruo

  Department Of Electronics And Informatics Toyama Prefectural University

• Takakura Hideyuki

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• KONDO Michio

  Institute for Solid State Physics, University of Tokyo

• Kondo Michio

  Institute For Solid State Physics University Of Tokyo

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