Average Lengths and Statistics of Bonds in In_<1-x>Ga_xAs_<1-y>P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
Statistics of relative numbers of bonds are derived by a thermodynamic analysis for the InGaAsP quaternary alloy semiconductor. Strain energy is taken into account as a dominant portion of the mixing enthalpy. In calculating the strain energy, a given kind of bond is considered to have various amounts of strain because of the randomness in the atom arrangement. On the basis of the results from the thermodynamic analysis, the average bond lengths in InGaAsP are obtained. Their dependences on the statistics of bonds and on the composition are discussed. The calculated bond lengths agree fairly well with those obtained by the extended-X-ray-absorption fine-structure measurement.
- 社団法人応用物理学会の論文
- 1988-10-20
著者
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Ichimura Masaya
Department Of Electrical Engineering Kyoto University
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Sasaki Akio
Department Of Electrical Engineering Kyoto University
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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