Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source
スポンサーリンク
概要
- 論文の詳細を見る
The Sb pile-up phenomenon during drive-in diffusion at 1000°C in N2, dry O2 and wet O2 atmospheres after predeposition was investigated. The Sb surface concentration during the predeposition using doped oxide source was about $7\times 10^{18}$ cm-3 which is lower than the solid solubility. From the measured Sb depth profiles in both Si and oxide, it was found that the Sb pile-up layer is located at the oxide side of the oxide/Si interface, the Sb peak concentration of the layer is of the order of $10^{19}$ cm-3 irrespective of diffusion atmospheres, and the layer is not a single monolayer but above 4 nm in width. The Sb amount taken into oxide during drive-in diffusion increases with the increase in oxide thickness and Sb surface concentration in Si. For drive-in diffusion in N2 ambient, the Sb pile-up amount in oxide is nearly saturated within the initial 10 min, while for the diffusion in dry O2 ambient, this occurs within 30 min.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-03-15
著者
-
Uchida Hideo
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
-
Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
-
Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
-
Ichino Tomohiro
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
-
Ichimura Masaya
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
-
Ichino Tomohiro
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa-ku, Nagoya 466-8555, Japan
関連論文
- Fast Fluid - Attenuated Inversion Recovery (FAST - FLAIR) of Ischemic Lesions in the Brain : Comparison with T2 - Weighted Turbo SE
- Slow Decay of Excess Carrier Concentration in Bonded Silicon-on-Insulator Wafers
- Control of Surface Recombination of Si Wafers by an External Electrode
- A New Technique of Compound Semiconductor Deposition from a Aqueous Solution by Photochemical Reaction
- Annealing Study of the Electrochemically Deposited InS_xO_y Thin Film and Its Photovoltaic Application
- A Defect Model for Photoirradiated Semiconductors : Suppression of the Self-Compensation in II-VI Materials
- Drug-induced pneumonitis detected earlier by ^F-FDG-PET than by high-resolution CT : a case report with non-Hodgkin's lymphoma
- A Unique Case of Renovascular Hypertension Caused by Combined Renal Artery Disease
- Three-Dimensional Power Doppler Sonography of Tumor Vascularity
- Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane : Electrical Properties of Condensed Matter
- Clinical evaluation of ^Tc-Technegas SPECT in thoracoscopic lung volume reduction surgery in patients with pulmonary emphysema
- Biliary Stenting by the Transhepatic Approach
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Search for Midgap Levels in 3C-SiC Grown on Si Substrates
- Study of Carrier Emission and Capture Processes at Electron Traps in 3C-SiC
- Uitrasonographic Screening for Artetial Occlusive Disease in the Pelvis and Lower Extremities
- Optical Characterization of GaSb-Based Ternary and Quaternary Alloys Grown by Liquid-Phase Epitaxy at Low Temperatures
- Photoluminescence Study of Al_xGa_Sb Grown by Liquid-Phase Epitaxy
- Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method
- Boron Diffusion Profiles in Ultrathin Silicon-on-Insulator Structures and Their Relation to Crystalline Quality
- Characterization of Thin Bonded Silicon-on-Insulator Structures by the Microwave Photocomductivity Decay Method
- AlGaSb Single, Double and Multiple Heterostructures Grown by Liquid-Phase Epitaxy and their Photoluminescence Properties : Semiconductors and Semiconductor Devices
- Predicted Extremely High Mobilities of Two-Dimensional Electrons in AlGaSb/GaSb and AlInAsSb/InAs Single Heterostructures
- Computer Controlled Precise Positioning for Electromagnetic Linear Motor with Correction of Periodic Error
- Sacrificial Anodic Oxidation of 6H-SiC : Semiconductors
- Calculation of Bond Lengths in Si_Ge_x Alloys Based on the Valence-Force-Field Model
- Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky Contacts Using Electrochemical Deposition of ZnO
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Calculation of Bond Lengths in InGaAsP Quaternary Alloy Semiconductor
- Average Bond Lengths and Atom Arrangement in In_Ga_xAs and GaAs_P_x III-V Ternary Alloy Semiconductors
- Alloy Scattering Mobility in III-V Ternary Alloy Semiconductors with Nonrandom Atom Arrangerment
- Electrochemical Deposition of ZnO1-xSx Thin Films Using Three-Step Pulse
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition(Session9B: GaN and SiC Device Process Technology)
- Wide Bandgap InS-based Thin Film: Deposition, Characterization, and Application for SnS Solar Cells
- Electrodeposited ZnO/SnS Heterostructures for Solar Cell Application
- Retarded Diffusion of Phosphorus in Silicon-on-Insulator Structures
- Photochemical Deposition of GaSxOy Thin Films from Aqueous Solutions
- Free Energies and Equilibrium States of Mono- and Bi-Layer Superstructures of III-V Ternary Alloy Semiconductors
- Solution Hardening due to a Nonrandom Atom Arrangement in III-V Ternary Alloy Semiconductors : Mechanical and Acoustical Properties
- Bond Lengths in III-V Ternary Alloy Semiconductors
- Photochemical Deposition of Patterned Gold Thin Films
- Atom Arrangement in III-V Quaternary Alloy Semiconductors of (ABC)D Type : Semiconductors and Semiconductor Devices
- Average Lengths and Statistics of Bonds in In_Ga_xAs_P_y Quaternary Alloy Semiconductor : Semiconductors and Semiconductor Devices
- Native Defects in III-V Ternary Alloy Semiconductors Grown from Liquid-Solutions
- Application and utility of computed tomography-guided needle biopsy with musculoskeletal lesions
- Room Temperature Gas Sensor with a High Sensitivity to Hydrogen Based on SnO2 Films Prepared by Photochemical Techniques
- As and Sb Diffusion Profiles in Thin Silicon-On-Insulator Wafers
- Formation of Graphene-Containing Porous Carbon Film for Electric Double-Layer Capacitor by Pulsed Plasma Chemical Vapor Deposition
- Observation of Inhomogeneity of Schottky Barrier Height on 4H–SiC Using the Electrochemical Deposition
- Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
- Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution
- Improvement of Electrochemically Deposited Cu2O/ZnO Heterojunction Solar Cells by Modulation of Deposition Current
- Fabrication of Electrodeposited SnS/SnO2 Heterojunction Solar Cells
- Prediction of the Band Offsets at the CdS/Cu2ZnSnS4 Interface Based on the First-Principles Calculation
- Estimation of Surface Recombination Velocity from Thickness Dependence of Carrier Lifetime in n-Type 4H-SiC Epilayers
- Electrodeposition of SnO2 Thin Films from Aqueous Tin Sulfate Solutions
- Electrical and Optical Properties of CdS Films Grown by Photochemical Deposition From Aqueous Solutions
- Analysis of Atomic and Electronic Structures of Cu2ZnSnS4 Based on First-Principle Calculation
- Characterization of Si wafer Surfaces after Wet Chemical Treatment by the Microwave Reflectance Photconductivity Decay Method with Surface Electric Field
- Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
- Electrochemical Deposition of GaSxOy Thin Films
- Deposition of Cd1-xZnxS ($0 \le x \le 1$) Alloys by Photochemical Deposition
- Room-Temperature Hydrogen Sensing Properties of SnO2 Thin Films Fabricated by the Photochemical Deposition and Doping Methods
- Leakage Current Suppression by Passivation of Defects by Anodic Oxidation of 4H-SiC Schottky Contacts
- Sb Pile-up at Oxide/Si Interface during Drive-in Diffusion after Predeposition Using Doped Oxide Source
- Deposition of SnSxOy Films by Electrochemical Deposition Using Three-Step Pulse and Their Characterization
- Applicability of Phosphorus and Boron Diffusion Parameters Extracted from Predeposition to Drive-in Diffusion for Bulk Silicon and Silicon-on-Insulator
- Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
- Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation