Excess Carrier Lifetime in a Bulk p-Type 4H–SiC Wafer Measured by the Microwave Photoconductivity Decay Method
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概要
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Excess carrier lifetime in a p-type 4H–SiC wafer was measured by the microwave photoconductivity decay (μ-PCD) method. The obtained excess carrier decay curve had the fast and slow components with time constants of ${\leq}1$ μs and ${\geq}1$ ms, respectively. The 1/e lifetime map for the wafer showed that the time constant of the fast component decreases around structural defects. On the other hand, the 1/e2 lifetime map showed that the time constant of the slow component does not depend on the defect distribution. We measured decay curves for the slow component at various temperatures, and fitted them to those obtained from the numerical simulation. The fitting result showed that the slow component is caused by a minority carrier trap located at 0.16 eV below the conduction band. From the measurement of samples with various surface conditions, we found that the excess carrier decay is independent of the surface condition. Thus, the excess carrier decay is caused predominantly by recombination in the bulk rather than at the surface of the wafer.
- 2007-08-15
著者
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SUMIE Shingo
LEO Division, Kobelco Research Institute, Inc.
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HASHIZUME Hidehisa
LEO Division, Kobelco Research Institute, Inc.
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Mori Tatsuhiro
Department Of Engineering Physics Electronics And Mechanics Nagoya Institute Of Technology
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
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Kawai Masahiko
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Mori Tatsuhiro
Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya 466-8555, Japan
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Hashizume Hidehisa
LEO Division, Kobelco Research Institute, Inc., Kobe 651-2271, Japan
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Sumie Shingo
LEO Division, Kobelco Research Institute, Inc., Kobe 651-2271, Japan
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