Electrochemical Etching of 6H-SiC Using Aqueous KOH Solutions with Low Surface Roughness
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概要
- 論文の詳細を見る
Commercially available n-type 6H-SiC wafers were etched in aqueous KOH solutions by an electrochemical method. We varied the etching conditions, such as KOH concentration, temperature, UV light illumination and current density, and observed the morphologies of the etched surfaces and etching rates. Etching proceeds with oxide film growth and its peeling off or with continuous dissolution of silicon oxide depending on the conditions. Although the etching under all the conditions roughens the surfaces at a current density of 5 mA/cm2, we obtained the flattest etched surface at a current density of 1 mA/cm2 in 1 wt% KOH concentration at temperature of 50–55°C with UV light illumination. We also fabricated a patterned structure under this etching condition with evaporated Ni metal as a mask.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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RAMASAMY Perumalsamy
Crystal Growth Centre, Anna University
-
Arai Eisuke
Department Of Electrical Ad Computer Engineering Nagoya Institute Of Technology
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Ichimura Masaya
Department Of Electrical & Computer Engineering Nagoya Institute Of Technology
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Kato Masashi
Department Of Applied Biological Chemistry Faculty Of Agriculture Meijo University
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Arai Eisuke
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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Ramasamy Perumalsamy
Crystal Growth Centre, Anna University, Chennai 600-25, India
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Ichimura Masaya
Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555, Japan
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