Cross-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy
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概要
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Interfacial roughness of InxGa1-xAs/InP ($x=0.53$) multiple quantum wells (MQW) grown by metalorganic vapor phase epitaxy has been investigated by cross-sectional scanning tunneling microscopy (STM). The MQW structure is composed of 125 periods of 11-nm-wide well layers and 44-nm-wide barrier layers on an InP (001) substrate. The observed STM images have revealed that the InGaAs-on-InP interface is extremely sharp compared to the InP-on-InGaAs interface; the roughness and terrace size on the InGaAs-on-InP interface are 1–2 monolayers (ML) and 31 nm, respectively, while they are 3–4 ML and 9 nm on the InP-on-InGaAs interface. The large roughness observed for the InP-on-InGaAs interface is interpreted in terms of the incorporation of residual As atoms on the InGaAs surface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Takeda Yoshikazu
Venture Business Laboratory Nagoya University
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Nakamura Arao
Department Of Applied Physics Faculty Of Engineering Nagoya University
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Yamakawa Ichirou
Department Of Applied Physics Nagoya University
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Oga Ryo
Department Of Materials Science And Engineering Graduate School Of Engineering. Nagoya University
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Fujiwara Yasufumi
Department Of Materials Science And Engineering Graduate School Of Engineering Nagoya University
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Yamauchi Takeshi
Core Research for Evolutional Science and Technology (CREST) of Japan Science and Technology Corporation (JST), Shibuya-ku 150-0002, Japan
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Fujiwara Yasufumi
Department of Materials Science and Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Oga Ryo
Department of Materials Science and Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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