Metal Adsorption Effect on Tunneling Spectra in Scanning Tunneling Spectroscopy of InAs Quantum Dots on GaAs(001)
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概要
- 論文の詳細を見る
We have investigated the effects of Ag atom adsorption and light illumination on tunneling spectra of an InAs wetting layer (WL) and quantum dots (QDs) on a GaAs(001) surface by means of scanning tunneling spectroscopy. The tunneling spectra measured on the Ag-adsorbed surface with the density $1\times 10^{14}$ cm-2 exhibit an increase in spectral intensity at a positive bias voltage, leading to suppression of tip-induced band bending. These results demonstrate that adsorption of Ag atoms as well as light illumination allows us to accurately measure the local density of states and gap energies in STS with eliminating the tip-induced band bending. The measured gap energies of the WL and QD are in good agreement with other measurements and the theoretical calculation based on the square-well potential model.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-07-15
著者
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Nakamura Arao
Core Research For Evolutional Science And Technology (crest) Of Japan Science And Technology Corpora
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Tabuchi Masao
Department Of Applied Physics Graduate School Of Engineering Nagoya University
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Ohyama Yasuaki
Department of Applied Physics, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
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Yamauchi Takeshi
Core Research for Evolutional Science and Technology (CREST) of Japan Science and Technology Corporation (JST), Shibuya-ku 150-0002, Japan
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Tabuchi Masao
Department of Applied Physics, Graduate School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603, Japan
関連論文
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- Thermal Stability of GaAs/InAs/GaAs Heterostructure Studied by X-Ray Crystal Truncation Rod Scattering Measurement
- Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation
- Metal Adsorption Effect on Tunneling Spectra in Scanning Tunneling Spectroscopy of InAs Quantum Dots on GaAs(001)
- Cross-Sectional Scanning Tunneling Microscopy Study of Interfacial Roughness in an InGaAs/InP Multiple Quantum Well Structure Grown by Metalorganic Vapor Phase Epitaxy
- Influence of Long-Range Lateral Ordering in Structures with Quantum Dots on the Spatial Distribution of Diffracted X-Ray Radiation