Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)
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概要
- 論文の詳細を見る
This paper describes the temperature dependent two dimensional electron gas (2DEG) properties in AlInN/AlN/GaN heterostructures. Hall mobility (aH) and 2DEG density (n_s) have been measured from 77 up to 973 K, where the atmospheric condition is changed as measured in vacuum and air. The μ_H decreases monotonically with increasing the temperature. It is found that the high temperature mobility is not only governed by the polar optical phonon scattering but also the acoustic phonon (deformation potential and piezoelectric) and interface roughness scatterings play a role. There was no significant difference observed in μ_H for changing the atmospheric condition. The characteristic feature is observed in ns that it is almost constant up to around 540 K, and shows sudden increase at higher temperatures when measured in the vacuum, while it is almost constant measured in the air. The surface barrier lowering originated from the decomposition of the surface oxide layer on AlInN is proposed as the most probable mechanism for the increase in ns.
- 一般社団法人電子情報通信学会の論文
- 2011-11-10
著者
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Kuzuhara Masaaki
Department Of Electrical And Electronics Engineering University Of Fukui
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Tokuda Hirokuni
Department Of Electrical And Electronics Engineering University Of Fukui
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HASAN Md.
Department of Electrical and Electronics Engineering, University of Fukui
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Hasan Md.
Department Of Electrical And Electronics Engineering University Of Fukui
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HASAN Tanvir
Department of Electrical and Electronics Engineering, University of Fukui
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- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (レーザ・量子エレクトロニクス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子デバイス)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures (電子部品・材料)
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
- Surface Barrier Height Lowering at Above 540K in AlInN/AlN/GaN Heterostructures
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