Molecular Beam Epitaxial Growth of (Al_yGa_<1-y>)_<0.5>In_<0.5>P on (100) GaAs : Condensed Matter
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Hosoda Masahiro
Frontier Research Program The Institute Of Physical And Chemical Research (riken):(present Address)
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Yamamoto S
Univ. Tsukuba Ibaraki Jpn
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SASAKI Kazuaki
Central Research Laboratory, Hitachi, Ltd.
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Hosoda M
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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HAYAKAWA Toshiro
Central Research Laboratories, Sharp Corporation
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TAKAHASHI Kosei
Central Research Laboratories, Sharp Corporation
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YAMAMOTO Saburo
Central Research Laboratories, Sharp Corporation
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HIJIKATA Toshiki
Central Research Laboratories, Sharp Corporation
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Hosoda Masahiro
Central Research Laboratories Sharp Corporation
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Sasaki Kazuaki
Central Research Laboratory Hitachi Ltd.
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Hijikata Toshiki
Optical-Device Laboratories, Sharp Corporation
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Hijikata T
Optical-device Laboratories Sharp Corporation
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Hijikata Toshiki
Central Research Laboratories Engineering Center Sharp Corporation
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Yamamoto Saburo
Central Research Laboratories Engineering Center Sharp Corporation
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Hayakawa Toshiro
Central Research Laboratories Sharp Corporation
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