HAYAKAWA Toshiro | Central Research Laboratories, Sharp Corporation

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著作論文

High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
Long-Lived (GaAl) As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder
High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers
GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs : Semiconductors and Semiconductor Devices
Temperature Dependence of Photoluminescence Properties in (111)- and (100)-Oriented GaAs/AlGaAs Quantum Well Structures : Surface, Interfaces and Films
Molecular Beam Epitaxial Growth of (Al_yGa_)_In_P on (100) GaAs : Condensed Matter
Multimode-Oscillating Behavior in Index-Guiding V-Channeled Substrate Inner Stripe Lasers Depending on Structural Factor

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