High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers

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Estimation of Electron Temperatures from I-V Characteristics of a Plasma Electrode of a Negative Ion Source
Production of Diatomic and Triatomic Molecular Negative Ions of Gold and Copper by Sputtering
Measurement of H^- Density in a Magnetized Plasma
Direct Extraction of Sodium Negative Ions from Sodium Plasma
Energy Distribution of Au^- Ions Produced by Sputtering
Dependence of Au^- Production upon the Target Work Function in a Plasma-Sputter-Type Negative Ion Source
Effect of a Converter Electrode in a Multicusp Negative Ion Source
Development of the Work Function Monitoring Method for a Converter of a Negative Ion Source
High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
Long-Lived (GaAl) As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder
High-Speed GaInAs PIN Photodiodes with Low Series Resistance
Evaluation of Surface Zn Concentration in Zn Diffusion into InP
Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP
Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
Zn Diffusion into InP Using Dimethylzinc as a Zn Source
High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers
Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs 0.8 μm Separate Confinement Heterostructure Lasers
GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs : Semiconductors and Semiconductor Devices
Temperature Dependence of Photoluminescence Properties in (111)- and (100)-Oriented GaAs/AlGaAs Quantum Well Structures : Surface, Interfaces and Films
Molecular Beam Epitaxial Growth of (Al_yGa_)_In_P on (100) GaAs : Condensed Matter
Multimode-Oscillating Behavior in Index-Guiding V-Channeled Substrate Inner Stripe Lasers Depending on Structural Factor
Single Longitudinal Mode Properties of External Cavity Tapered and Straight Broad-Stripe Lasers with Bandpass Filter

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