GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Hosoda Masahiro
Frontier Research Program The Institute Of Physical And Chemical Research (riken):(present Address)
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Yamamoto S
Univ. Tsukuba Ibaraki Jpn
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Hosoda M
Department Of Materials Science And Technology Faculty Of Engineering Gifu University
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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HAYAKAWA Toshiro
Central Research Laboratories, Sharp Corporation
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TAKAHASHI Kosei
Central Research Laboratories, Sharp Corporation
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YAMAMOTO Saburo
Central Research Laboratories, Sharp Corporation
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HIJIKATA Toshiki
Central Research Laboratories, Sharp Corporation
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Hosoda Masahiro
Central Research Laboratories Sharp Corporation
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Hijikata Toshiki
Optical-Device Laboratories, Sharp Corporation
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Hijikata T
Optical-device Laboratories Sharp Corporation
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Hijikata Toshiki
Central Research Laboratories Engineering Center Sharp Corporation
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Yamamoto Saburo
Central Research Laboratories Engineering Center Sharp Corporation
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Hayakawa Toshiro
Central Research Laboratories Sharp Corporation
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