Multimode-Oscillating Behavior in Index-Guiding V-Channeled Substrate Inner Stripe Lasers Depending on Structural Factor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1982-10-20

著者

• HAYAKAWA Toshiro

  Central Research Laboratories, Sharp Corporation

• HIJIKATA Toshiki

  Central Research Laboratories, Sharp Corporation

• HAYAKAWA Toshiro

  Miyanodai Technology Development Center, Fuji Photo Film Co., Ltd.

• Hijikata Toshiki

  Central Research Laboratories Engineering Center Sharp Corporation

• Hijikata Toshiki

  Central Research Laboratories Sharp Corporation

• YANO Seiki

  Central Research Laboratories, Engineering Center, SHARP Corporation

• Hayakawa Toshiro

  Central Research Laboratories Sharp Corporation

• Yano Seiki

  Central Research Laboratories Engineering Center Sharp Corporation

• Yano Seiki

  Central Research Laboratories Sharp Corporation

関連論文

• High Reliability in AlGaAs Laser Diodes Prepared by Molecular Beam Epitaxy on 0.5°-Misoriented (111)B Substrates : Waves, Optics and Quantum Electronics
• Enhancement of the Capture Rate of Carriers in (111)-Oriented GaAs/AlGaAs Quantum Well Structures : Electrical Properties of Condensed Matter
• Enhancement of Heavy-Hole-Related Excitonic Optical Transitions in (111)-Oriented Quantum Wells : Surfaces, Interfaces and Films
• Reduction in Threshold Current Density of Quantum Well Lasers Grown by Molecular Beam Epitaxy on 0.5° Misoriented (111)B Substrates
• Long-Lived (GaAl) As DH Lasers Bonded with In Produced by Eliminating Deterioration of In Solder
• High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers
• Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs 0.8 μm Separate Confinement Heterostructure Lasers
• High-Power CW Operation in V-Channeled Substrate Inner-Stripe Lasers with "Torch"-Shaped Waveguide : Waves, Optics and Quantum Electronics
• Stable Single-Longitudinal-Mode Operation over Wide Temperature Range on Semiconductor Lasers with a Short External Cavity
• GaInP/AlInP Quantum Well Structures and Double Heterostructure Lasers Grown by Molecular Beam Epitaxy on (100) GaAs : Semiconductors and Semiconductor Devices
• Temperature Dependence of Photoluminescence Properties in (111)- and (100)-Oriented GaAs/AlGaAs Quantum Well Structures : Surface, Interfaces and Films
• Molecular Beam Epitaxial Growth of (Al_yGa_)_In_P on (100) GaAs : Condensed Matter
• Phased-Array with the "YY" Shaped Symmetrically Branching Waveguide (SBW)
• Multimode-Oscillating Behavior in Index-Guiding V-Channeled Substrate Inner Stripe Lasers Depending on Structural Factor

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