Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE

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Estimation of Electron Temperatures from I-V Characteristics of a Plasma Electrode of a Negative Ion Source
Production of Diatomic and Triatomic Molecular Negative Ions of Gold and Copper by Sputtering
Measurement of H^- Density in a Magnetized Plasma
Direct Extraction of Sodium Negative Ions from Sodium Plasma
Energy Distribution of Au^- Ions Produced by Sputtering
Dependence of Au^- Production upon the Target Work Function in a Plasma-Sputter-Type Negative Ion Source
Effect of a Converter Electrode in a Multicusp Negative Ion Source
Development of the Work Function Monitoring Method for a Converter of a Negative Ion Source
High-Speed GaInAs PIN Photodiodes with Low Series Resistance
Evaluation of Surface Zn Concentration in Zn Diffusion into InP
Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP
Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
Zn Diffusion into InP Using Dimethylzinc as a Zn Source
High-Power 0.8 μm InGaAsP/InGaP/AlGaAs Single Quantum Well Lasers with Tensile-Strained InGaP Barriers
Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs 0.8 μm Separate Confinement Heterostructure Lasers
Rapid Preparation of High-T_c Superconductors of the Bi-2212 Phase Using a Domestic Microwave Oven
Rapid Preparation of YBa_2Cu_3O_ with T_c〜90 K Using a Domestic Microwave Oven
Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350℃ by Conventional Molecular Beam Epitaxy

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