Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We report on the effect of substrate temperature on the threshold current density in GaAs/AlGaAs single-quantum-well lasers grown by molecular beam epitaxy under various flux ratios. It is found that the threshold current density has W-shape dependence on the substrate temperature and exhibits minima of 600 A/cm^2 and 400 A/cm^2 at the substrate temperatures of 375℃and 650℃, respectively.
- 社団法人応用物理学会の論文
- 1991-11-15
著者
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Mizutani N
Ulvac Japan Ltd. Kanagawa Jpn
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MIYAZAWA Sei-ichi
Canon Research Center
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SEKIGUCHI Yoshinobu
Canon Research Center
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MIZUTANI Natsuhiko
Canon Research Center
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Sekiguchi Y
Canon Inc. Tokyo Jpn
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Miyazawa S
Ushio Res. Inst. Technol. Inc. Shizuoka Jpn
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