Preparation of YBa_2Cu_3O_<7-y> High T_c Thin Films on NdGaO_3 Substrate by Laser Ablation

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概要

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• As-grown thin films of YBa_2Cu_3O_<7-y> with a smooth surface were obtained on lattice-matched NdGaO_3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (T_c) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa_2Cu_3O_<7-y> films on NdGaO_3 substrates were high-quality single crystals. NdGaO_3 substrates are thought to be a promising substrate for epitaxial growth of YBa_2Cu_3O_<7-y> high T_c thin films.

• 社団法人応用物理学会の論文
• 1990-06-20

著者

• 向田 昌志

  山形大学工学部電気電子工学科

• Mukaida Masashi

  Kyushu Univ. Fukuoka Jpn

• Kuroda Ken'ichi

  Ntt Lsi Laboratories

• Mukaida Masashi

  NTT LSI Laboratories

• Miyazawa Shintaro

  NTT LSI Laboratories

• MUKAIDA Masashi

  NTT System Electronics Laboratories

• Mukaida M

  Kyushu University

• 向田 昌志

  九州大学・大学院工学研究院・材料工学部門

• SASAURA Masahiro

  NTT LSI Laboratories

• Miyazawa S

  Ushio Res. Inst. Technol. Inc. Shizuoka Jpn

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