Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350℃ by Conventional Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
Photoluminescence measurements have been carried out for GaAs/AlGaAs single quantum well (SQW) structures grown without interruption by conventional molecular beam epitaxy. The full widths at half-maximum (FWHM) from QWs having thin well width were reduced monotonously with the decrease of growth temperature until 35O℃ to one-half. This reduction of FWHM was explained by the transition of the top and bottom heterointerfaces which became close to the effective smooth interfaces at 350℃. The peak intensity had only a weak dependence on the growth temperature at the same temperature.
- 社団法人応用物理学会の論文
- 1991-10-01
著者
-
Mizutani N
Ulvac Japan Ltd. Kanagawa Jpn
-
MIYAZAWA Sei-ichi
Canon Research Center
-
SEKIGUCHI Yoshinobu
Canon Research Center
-
MIZUTANI Natsuhiko
Canon Research Center
-
Sekiguchi Y
Canon Inc. Tokyo Jpn
-
Miyazawa S
Ushio Res. Inst. Technol. Inc. Shizuoka Jpn
関連論文
- High-Speed GaInAs PIN Photodiodes with Low Series Resistance
- Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP
- Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
- Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
- GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
- Zn Diffusion into InP Using Dimethylzinc as a Zn Source
- GaN Thin Film Growth on LiGaO_2 Substrate with a Multi-Domain Structure
- >LiGa0_2 Single Crystals for a Substrate of Hexagonal GaN Thin Films
- Superior Properties of Cesium Triborate CsB_3O_5 for 194 nm Light Generation with Nd:Y_3Al_5O_ Laser
- Refractive Index of CsB_3O_5 Grown by Top-Seeded Solution Growth
- Thermal Resistance between Enhanced Nuclear Spins in TmVO_4 and Liquid ^3He : I. QUANTUM LIQUIDS AND SOLIDS : Interfaces of He
- Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
- Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350℃ by Conventional Molecular Beam Epitaxy
- Proposal on Temperature-Insensitive Semiconductor Lasers
- Preparation of YBa_2Cu_3O_ High T_c Thin Films on NdGaO_3 Substrate by Laser Ablation
- Superconducting YBa_2Cu_3O_x Thin Film Growth on a Vicinal Surface of NdGaO_3 Substrate
- Composition Dependence and Electrical Properties of T_c>100 K BiSrCaCuO Superconducting Oxide Films Prepared by Sequential Deposition : High Temperature Superconducting Thin-Films(Solid State Devices and Materials 1)
- Preparation of New High-T_c Superconducting Oxide Bi-Sr-Ca-Cu-O Thin Film by Electron Beam Deposition Technique : Electrical Properties of Condensed Matter
- Nature of Preferred Orientation of YBa_2Cu_3O_x Thin Films
- Growth and Crystallographic Analysis of YBa_2Cu_3O_x Thin Films on NdGaO_3 Substrates
- Water Vapor Effects on Titanium Diffusion into LiNbO_3 Substrates
- Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers