Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers

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概要

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• We report on the low-temperature Molecular Beam Epitaxy (MBE) growth of single quantum well (SQW) GaAs/AlGaAs lasers under a low flux ratio. Lasing action was observed at a substrate temperature as low as 300℃. A threshold current density of 600 A/cm^2 was obtained at the substrate temperature of 375℃, which is the lowest threshold current density below 400℃ reported so far.

• 社団法人応用物理学会の論文
• 1991-05-15

著者

• MIYAZAWA Sei-ichi

  Canon Research Center

• SEKIGUCHI Yoshinobu

  Canon Research Center

関連論文

• Threshold Current Density of GaAs/AlGaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy
• Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350℃ by Conventional Molecular Beam Epitaxy
• Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers

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