Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-15
著者
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Higuchi M
Kyushu Univ. Fukuoka
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Higuchi Masahiko
Optical Measurement Technology Development Co. Ltd.
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Wada Morio
Optical Measurement Technology Development Co. Ltd.
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SAKAKIBARA Katsutoshi
Optical Measurement Technology Development Co., Ltd.
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SEKIGUCHI Yoichi
Optical Measurement Technology Development Co., Ltd.
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IWAOKA Hideto
Optical Measurement Technology Development Co., Ltd.
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Wada M
Miyanodai Technology Development Center Fuji Photo Film Co. Ltd.
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Iwaoka Hideto
Optical Measurement Technology Development Co. Ltd.
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Sekiguchi Y
Canon Inc. Tokyo Jpn
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Sakakibara Katsutoshi
Optical Measurement Technology Development Co. Ltd.
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Sakakibara K
Department Of Applied Physics Graduate School Of Engineering Tohoku University
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- Effect of a Converter Electrode in a Multicusp Negative Ion Source
- Development of the Work Function Monitoring Method for a Converter of a Negative Ion Source
- High-Speed GaInAs PIN Photodiodes with Low Series Resistance
- Evaluation of Surface Zn Concentration in Zn Diffusion into InP
- Effects of Phosphorus Pressure on Low-Energy Emission Bands in Zn-Diffused InP
- Wide-Wavelength GaInAs PIN Photodiodes Using a Lattice-Mismatched Light-Absorbing Layer and a Thin InP Cap Layer
- Incorporation of Arsenic and Gallium in InP Layers in GaInAs/InP Heterostructures Grown by MOVPE
- GaInAs/InP PIN Photodiodes Fabricated by MOVPE and a New Zn Diffusion Technique
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