Formation of Stacking-Faults in Atomic Graphoepitaxial a-Axis YBa_2Cu_3O_x Thin Films on (100) SrLaGaO_4 Substrates
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概要
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The complicated crystalline microstructure of c-axis in-plane-aligned, a-axis oriented YBa_2Cu_3O_x thin films on K_2NiF_4-type (100) SrLaGaO_4 substrates is discussed in relation to surface irregularities inherent in the (100) SrLaGaO_4 substrate. Transmission electron microscopy reveals that interlattice planes of YBa_2Cu_3O_x shift by multiples of c/6 unit, resulting in anti-phase domain boundaries and stacking-faults. The formation of these defects can be correlated with the cobbled substrate surface and is modeled in terms of atomic steps on the cobbled surface based on our growth model named "atomic graphoepitaxy".
- 社団法人応用物理学会の論文
- 1996-09-15
著者
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向田 昌志
山形大学工学部電気電子工学科
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Mukaida Masashi
Kyushu Univ. Fukuoka Jpn
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Mukaida Masashi
NTT LSI Laboratories
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Miyazawa Shintaro
NTT LSI Laboratories
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MUKAIDA Masashi
NTT System Electronics Laboratories
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向田 昌志
九州大学・大学院工学研究院・材料工学部門
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