Fabrication of All-Epitaxial High-T_c SIS Tunnel Structures (Special Section on Superconducting Devices)

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概要

• 論文の詳細を見る

• Fabrication of all-epitaxial high-T_c SIS tunnel junctions requires an atomically flat superconducting thin film to be grown and a proper insulating material to be selected. First, we study the initial growth mode of YBCO thin films and show that reducing the growth rate results in a very smooth surface. Second, perovskite-related compound oxideds, PrGaO_3 and NdGaO_3, which have a small lattice mismatch with YBCO and good wetability, are shown to be promising insulating materials for all-epitaxial SIS tunnel junctions. We believe that these concepts will be useful in the development of all-epitaxial high-T_c SIS tunnel junctions with good electrical properties.

• 社団法人電子情報通信学会の論文
• 1994-08-25

著者

• 向田 昌志

  山形大学工学部電気電子工学科

• Mukaida Masashi

  Kyushu Univ. Fukuoka Jpn

• Kobayashi Junya

  Ntt Lsi Laboratories

• Tazoh Y

  Ntt Lsi Laboratories

• Tazoh Yasuo

  Ntt Lsi Laboratories

• Mukaida Masashi

  NTT LSI Laboratories

• Miyazawa Shintaro

  NTT LSI Laboratories

• Mukaida M

  Department Of Materials Science And Engineering Kyushu University

• MUKAIDA Masashi

  NTT System Electronics Laboratories

• 向田 昌志

  九州大学・大学院工学研究院・材料工学部門

• Miyazawa S

  Ntt System Electronics Lab. Atsugi‐shi Jpn

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