Fujita K | Atr Adaptive Communications Research Laboratories

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著作論文

Room-Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Silicon Doping in Nonplanar Epitaxy
Thermal Stability of Beryllium Atoms in Be δ-Doped GaAs Grown on GaAs(111)A by Molecular Beam Epitaxy
Lateral Tunneling Devices on GaAs (111)A and (311)A Patterned Substrates Grown by MBE Using Only Silicon Dopant
Vanishing of Negative Differential Resistance Region due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs
Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-oriented Substrates
Spontaneous Formation of Nanostructures in In_xGa_As Epilayers Grown by Molecular Beam Epitaxy on GaAs Non-(100)-Oriented Substrates
Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time-Resolved Photoluminescence Spectroscopy
Carrier Dynamics in Piezoelectric Quantum Wells Grown on GaAs (111)A, (211)A and (311)A Studied by Time Resolved Photoluminescence Spectroscopy
Quantum-Confined Stark Shift Due to Piezoelectric Effect in InGaAs/GaAs Quantum Wells Growrn on (111)A GaAs
Characterization of GaAs P-N Structures Grownon GaAs (111) A Substrates Using Controlled All-Silicon Doping
Influence of the Piezoelectric Effect on the Energy Levels of InGaAs/GaAs Strained Quantum Wells Grown on (311)A GaAs
Vibrational Response Analysis of Mistuned Bladed Disk
Optimal Design of Turbine Blade using Sensitivity Analysis
Vanishing of Negative Differential Resistance Region Due to Electric Field Screening in Wannier-Stark Localization Type Self-Electro-Optic Effect Devices
Valence Band Modulation in InGaAs/InAlAs Superlattices with Tensilely Strained Wells Grown on InGaAs Quasi-Substrate on GaAs

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