Vapor-Phase Epitaxial Growth of GaAs by the Single Flat Temperature Zone Method
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概要
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The VPE growth of GaAs using the single flat temperature zone (SFT) method with the GaAs (crust)-AsCl_3-He-H_2 system is described. The growth in this system is kinetically limited and occurs selectively on the substrate. High-purity GaAs is obtained in the low AsCl_3 mole fraction range, and the AsCl_3 mole fraction effect is not observed in this system as it is in other SFT systems. It is concluded that the present system is the most promising of the four SFT systems.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
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KOUKITU Akinori
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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SEKI Hisashi
Department of Applied Chemistry, Tokyo University of Agriculture and Technology
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Koukitu Akinori
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Seki Hisashi
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Kouno Satoshi
Department of Industrial Chemistry, Tokyo University of Agriculture and Technology
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Takashima Kouichirou
Department of Industrial Chemistry, Tokyo University of Agriculture and Technology
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Kouno Satoshi
Department Of Obstetrics And Gynecology Kagoshima City Hospital
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